12:["$","div","2490",{"className":"Post-module__aBOVGG__post","style":{"display":"flex","flexDirection":"column","alignItems":"center","gap":"8px","flex":"1","width":"calc(100% - 4vw)","padding":"12px","maxWidth":"920px"},"children":[["$","div",null,{"className":"$undefined","style":{"display":"flex","gap":"0.4rem","flexWrap":"wrap","width":"100%"},"children":[false,[["$","a","31D7",{"href":"/31D7","className":"Post-module__aBOVGG__fg","style":{},"children":"FinFET"}],["$","a","404A",{"href":"/404A","className":"Post-module__aBOVGG__fg","style":{},"children":"トランジスタ"}]]]}],["$","article",null,{"className":"article","children":[["$","div",null,{"className":"$undefined","style":{"display":"flex","justifyContent":"space-between","flexWrap":"wrap","width":"100%"},"children":[["$","h2",null,{"style":{"margin":"0.2rem"},"children":["$","a",null,{"href":"/2490","children":"GAAトランジスタ"}]}],["$","div",null,{"className":"$undefined","style":{"display":"flex","justifyContent":"end","alignItems":"center","flex":"1","textAlign":"right","whiteSpace":"nowrap"},"children":["$","div",null,{"children":"2024/1/4 14:53:00"}]}]]}],["$","div",null,{"className":"article_body","dangerouslySetInnerHTML":{"__html":"

GAA（Gate All Around）構造のトランジスタ\n
FinFETよりも、さらに小さな面積で製造できる\n
── 『3nm、2nm 半導体プロセスが実寸法を表していない理由』

"}}]]}],["$","div",null,{"className":"$undefined","style":{"display":"flex","gap":"0.4rem","flexWrap":"wrap","width":"100%"},"children":[false,[["$","a","2AE0",{"href":"/2AE0","className":"Post-module__aBOVGG__bg","style":{},"children":"『3nm、2nm 半導体プロセスが実寸法を表していない理由』"}]]]}]]}]